sud/suu10p06-280l vishay siliconix document number: 70780 s-20349?rev. f, 18-apr-02 www.vishay.com 2-1 p-channel 60-v (d-s), 175 c mosfet, logic level product summary v ds (v) r ds(on) ( ) i d (a) 0.170 @ v gs = ?10 v ?10 ?60 0.280 @ v gs = ?4.5 v ?8 to-252 s gd top view drain connected to tab order number: SUD10P06-280L s g d p-channel mosfet to-251 s gd top view and drain-tab order number: suu10p06-280l absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit gate-source voltage v gs 20 v t c = 25 c ?10 continuous drain current (t j = 150 c) t c = 100 c i d ?7 pulsed drain current i dm ?20 a continuous source current (diode conduction) i s ?10 avalanche current i ar ?10 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 5 mj t c = 25 c 37 maximum power dissipation t a = 25 c p d 2 a w operating junction and storage temperature range t j , t stg ?55 to 175 c thermal resistance ratings parameter symbol typical maximum unit fr4 board mount 60 70 junction-to-ambient a free air r thja 120 140 c/w junction-to-case r thjc 3.7 4.0 c/w notes a. surface mounted on fr4 board. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm www..net
sud/suu10p06-280l vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70780 s-20349 ? rev. f, 18-apr-02 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = ? 250 a ? 60 gate-threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1.0 ? 2.0 ? 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = ? 60 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 60 v, v gs = 0 v, t j = 125 c ? 50 a dss v ds = ? 60 v, v gs = 0 v, t j = 175 c ? 150 ? 5 v, v gs = ? 10 v ? 10 a v gs = ? 10 v, i d = ? 5 a 0.130 0.170 v gs = ? 10 v, i d = ? 5 a, t j = 125 c 0.31 ? 10 v, i d = ? 5 a, t j = 175 c 0.375 v gs = ? 4.5 v, i d = ? 2 a 0.210 0.280 forward transconductance b g fs v ds = ? 15 v, i d = ? 5 a 6 s dynamic input capacitance c iss 635 output capacitance c oss v ds = ? 25 v, v gs = 0 v, f = 1 mhz 100 pf reverse transfer capacitance c rss 30 total gate charge q g 11.5 25 gate-source charge q gs v ds = ? 30 v, v gs = ? 10 v, i d = ? 10 a 3.5 nc gate-drain charge q gd ds gs d 2 turn-on delay time c t d(on) 9 20 rise time c t r v dd = ? 30 v, r l = 3 16 20 turn-off delay time c t d(off) v dd = ? 30 v, r l = 3 10 a, v gen = ? 10 v, r g = 2.5 17 30 ns fall time c t f d gen g 19 35 source-drain diode ratings and characteristics (t c = 25 c) a pulsed current i sm ? 20 a forward voltage b v sd i f = 10 a, v gs = 0 v ? 1.3 v reverse recovery time t rr i f = 10 a, di/dt = 100 a/ s 50 80 ns notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. www..net
sud/suu10p06-280l vishay siliconix document number: 70780 s-20349 ? rev. f, 18-apr-02 www.vishay.com 2-3 typical characteristics (25 c unless noted) 0 3 6 9 12 15 18 048121620 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 0 6 12 18 24 30 0246810 0 4 8 12 16 20 0 4 8 12162024 0.0 0.3 0.6 0.9 1.2 0246810 0 2 4 6 8 10 012345 25 c ? 55 c t c = 125 c v ds = 20 v i d = 10 a v gs = 10 thru 7 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c 3 v 4 v 5 v 6 v v gs = 10 v 0 200 400 600 800 1000 0 102030405060 c iss c oss i d ? drain current (a) www..net
sud/suu10p06-280l vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70780 s-20349 ? rev. f, 18-apr-02 typical characteristics (25 c unless noted) 0.3 0.6 0.9 1.2 1.5 on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) ? on-resistance ( t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) r ds(on) ) ? source current (a) i s 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 100 10 1 v gs = 10 v i d = 5 a t j = 25 c t j = 150 c thermal ratings drain current vs. case temperature normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 normalized effective transient thermal impedance 3 safe operating area t c ? case temperature ( c) v ds ? drain-to-source voltage (v) ? drain current (a) i d ? drain current (a) i d 30 10 0.1 0 3 6 9 12 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.1 1 10 100 1 1 t c = 25 c single pulse 1 ms 10 ms 100 ms dc, 1 s 10 s 100 s limited by r ds(on) www..net
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